Fabrication Method of Carbon-based Materials in CH4/N2 Plasma by RF-PECVD and Annealing Treatment for Laser Diodes

The present research addresses the synthesis of carbon materials thin films by RF-PECVD in N2/CH4 gas mixture. Carbon film was formed at 40/48 sccm CH4/N2 total flow rate ratio CH4/CH4+N2 = 0.45 and 200/100 W HF/LF power a deposition temperature 350 oC 1000 mTorr pressure. Then, post-annealing took place 400 means RTA under N2 flow. formation nanostructures investigated scanning electron microscopy, energy dispersive X-ray, Raman spectroscopy, atomic force respectively. AFM shows that consisted nanocrystalline grains. surface morphology structural characteristics were studied as function substrate temperature. EDX results indicated presence, spectroscopy analysis revealed two broad bands: D-band 1381.64 cm−1 G-band 1589.42 cm−1. temperature-dependent plays key role graphite crystallites growth high temperatures. Our indicate incorporation for laser diode applications.